Carbono y diamante

Raman spectroscopy is an essential tool in the carbon industry, whether for quality control of diamond-like carbon (DLC) coatings, or for characterising the structure and chirality of carbon nanotubes.

For quality control functions, Renishaw provide a custom analysis program (CAP), allowing automated data collection with integrated complex spectra analysis followed by a 'pass or fail' output.

The Raman and photoluminescence capabilities of Renishaw's inVia Raman systems are widely used to identify whether diamonds have been artificially treated at high temperature and pressure (known as HPHT treated or GE-POL diamonds) to change their colour and hence value.

The images on the right illustrate the use of Raman imaging for revealing the stress distributions produced when type Ib and type IIb diamonds are impressed at high temperatures by a cubic boron nitride (CBN) indenter.

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Documents for download

	Using Raman spectroscopy to study the effect of boron on the mechanical properties of diamond Document describing the analysis of high temperature impressions in diamond by Raman depth profiling and mapping.	[130KB]
	Raman systems for carbon analysis One page document detailing Raman analysis of hard disk DLC coatings and diamond films. It also includes information on the advantages of Raman spectroscopy as well as other applications in Carbon technology that the utilisation of Raman benefits.	[263KB]
	A SEM-SCA study of single-wall nanotubes Application note: Renishaw's structural and chemical analyser for scanning electron microscopes.	[79KB]

Selected publications

Temperature-mediated growth of single-walled carbon-nanotube intramolecular junctions (2007), Yagang Yao et al, Nature materials, 6, 283-286

Elimination of D-band in Raman spectra of double wall carbon nanotubes by oxidation (2005), S Osswald et al, Chemical Physics letters, 402, 422-427

Identification of GE POL diamonds: a second step (2000), J L Chalain et al, Journal of Gemmology, 27, 2, 73-78

Detection of GE POL diamonds: a first stage (1999), J P Chalain et al, Revue de Gemmologie A. F. G., 138/139, 30-33